Area-Selective Atomic Layer Deposition Using Inkjet-printed Fluorocarbon Patterns as Mask Layers

摘要

This study introduces area-selective atomic layer deposition (AS-ALD) using fluorocarbon (FC) mask patterns with low surface energy. FC mask patterns were formed on a glass substrate by inkjet printing method. The surface energy of the printed FC thin film was 13.04 dyne/cm enough low to inhibit nucleation and growth during ALD. 10 μm wide Al_2O_3 patterns were selectively formed by removal of FC mask patterns using oxygen plasma after Al_2O_3 ALD processes.