Development of Positive-type Photoresists Based on Polyorganosilsesquioxanes for the Pixel Defining Layer (PDL) in OLED Structures

摘要

Silicone-based positive-type photoresists for the pixel defining layer (PDL) in OLED Structures have been developed. Silicone binder based on polyorganosilsesquioxane resin for the PDL has been synthesized by using a well-known sol-gel reaction. Also, photoresist characteristics based on silicone resin such as film retention rate, patterning profile, thermal stability, out-gas, and transmittance have been investigated. In particular, thermal stability at high temperature (400°C), transmittance at 400 nm, and out-gas properties were highly effective for the PDL application in OLED devices.