Development of high performance near-ultraviolet OLEDs based onthe Double Wide Band Gap Emissive Layers

机译：基于双宽带隙发射层的高性能近紫外OLED的开发

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Organic light-emitting diodes (OLEDs) based onrnthe double wide band gap emissive layers in the rangernof 380 nm to 440 nm are reported. An efficientrnelectroluminescence with a maximum at 400nm wasrnobserved at room temperature under a forward biasrnabout 10V. With the wide band gap organic materialsrnfor near-ultraviolet emission, the low operatingrnvoltage (5V) and high current efficiency (3 cd/A) havernbeen obtained at 2mA/cm2

机译：报道了基于在380nm至440nm范围内的双宽带隙发射层的有机发光二极管（OLED）。在约10V的正向偏压下，在室温下观察到有效的电致发光，最大值为400nm。使用宽带隙有机材料进行近紫外发射，在2mA / cm2的条件下获得了低工作电压（5V）和高电流效率（3 cd / A）

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《The 6th International Meeting on Information Display and the 5th International Display Manufacturing Conference (IMID/IDMC 2006)》|2006年|977-979|共3页
会议地点 Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR);Daegu Exhibition Convention Center (EXCO)(KR)
作者
Young Min Kim; Young Wook Park; Jin Hwan Choi; Jai kyeong Kim; Byeong Kwon Ju;
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作者单位

College of engineering,Display and Nanosystem Lab.,Korea Univ.,Seoul 136-701,Korea Korea Institute of Science and Technology,Opto Electronic Materials Research Center,Seoul 136-791,Korea Phone: +82-2-3290-3671,E-mail: kimzang@korea.ac.kr;

College of engineering,Display and Nanosystem Lab.,Korea Univ.,Seoul 136-701,Korea;

College of engineering,Display and Nanosystem Lab.,Korea Univ.,Seoul 136-701,Korea;

Korea Institute of Science and Technology,Opto Electronic Materials Research Center,Seoul 136-791,Korea;

College of engineering,Display and Nanosystem Lab.,Korea Univ.,Seoul 136-701,Korea;

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4. Development of high performance near-ultraviolet OLEDs based on the Double Wide Band Gap Emissive Layers [C] . International Display Manufacturing Conference . 2006

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Development of high performance near-ultraviolet OLEDs based onthe Double Wide Band Gap Emissive Layers

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