Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors Capped with Molybdenum-Doped ZnO Ultraviolet-Shield Layers

摘要

Nitrogen-doped amorphous InGaZnO (a-IGZO:N) and Molybdenum-doped ZnO (MZO) were combined to prepare more stable thin film transistors (TFTs). The superior positive bias stress, negative bias stress, and negative bias illumination stress stabilities were observed for the a-IGZO:N TFTs capped with MZO films, which might be due to the channel-layer improvement by the nitrogen-doping, the shield of ultraviolet-lights by the MZO, and the good interface between the a-IGZO:N and MZO.