p-Si– n-(Si 2) 1 – x (ZnSe) x (0 ≤ x ≤ 0.01) Heterostructure]]>

摘要

The current–voltage characteristics of p -Si– n -(Si~(2))~(1 –)~( x )(ZnSe)~( x )(0 ≤ x ≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as V = V ~(0)exp( Jad ). The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.