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Quantum Chemical Analysis of the Processes of Synthesis of Vanadium Oxide Structures on the Silica Surface

机译:二氧化硅表面氧化钒结构合成过程的量子化学分析

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Based on a combination of quantum chemical simulation and experimental studies, the formation of vanadium oxide structures on the silica surface when sequentially treated with VOCl(3)and H2O vapors was analyzed. The synthesis products were identified by IR spectroscopy. Changes in the composition and structure of the resultant surface species according to the process temperature and VOCl(3)vapor pressure in the reactor were predicted by quantum chemical methods. By the example of the synthesis at 473 K in a flow-through system and study of the chemical composition and structure of the new functional groups formed on the surface, a good agreement between the experimental and calculated data was demonstrated. The results of IR spectroscopic studies of the samples synthesized were processed using quantum chemical approaches. The characteristic IR absorption band due to vibrations of the bridging bonds of vanadium atoms with the Si-O-V matrix, localized at 920-945 or 960 cm(-1)depending on the structure of the surface sites, was used as the basis for identification of the surface vanadium oxide groups.
机译:基于量子化学模拟和实验研究的组合,分析了用VOCL(3)和H 2 O蒸汽顺序处理时二氧化硅表面上的氧化钒结构的形成。通过IR光谱鉴定合成产物。通过量子化学方法预测了根据工艺温度和VOCL(3)蒸气压的所得表面物质的组成和结构的变化。通过在473k的合成中的实施例,流通系统和在表面上形成的新官能团的化学成分和结构的研究,证明了实验和计算数据之间的良好一致性。使用量子化学方法处理合成的样品的IR光谱研究结果。用钒原子桥接与Si-OV基质的桥接引起的特征IR吸收带,取决于表面位点的结构,定位在920-945或960cm(-1),作为鉴定的基础表面钒氧化物基团。

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