Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors

摘要

The influence of temperature on the most important electrical parameters of a complementary bipolar pair of vertical transistors is numerically investigated in the thermodynamic and drift-diffusion models. The advantage of the thermodynamic model in analyzing high-power transistors due to the fact that this model takes into account the self-heating effect is demonstrated;. The simulation results are compared with the experimental characteristics of the test structures. The comparison shows that, for the current amplification factor β and the Early voltage V ~( A ), the computational error is less than 15%; for the critical parameter, the collector–emitter breakdown voltage V ~( CE 0), it is less than 2%, which is sufficient to use the thermodynamic model for practical purposes.