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Estimation of thermoluminescence kinetic parameters in h-BN by different techniques

机译:不同技术估计H-BN的热敏发光动力学参数

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AbstractParticulars of the UV-irradiated h-BN micropowder were studied by the means of spectrally resolved thermoluminescence (TL) technique. Using curve fitting, peak shape, various heating rates and initial rise methods an estimation of kinetic parameters (activation energy, effective frequency factor and kinetics order) for the active capture centers, forming the complex multitrap system, was performed. It is shown that TL in 380 and 425?nm bands is caused by the radiative transitions of electrons from 1B- and 3B-centers levels with 0.7 and 1.2?eV energy below the bottom of conduction band to the carbon levels (CN-centers) with the activation energy of 1.4?eV above the top of valence band, respectively. The consideration of temperature quenching of luminescence in the evaluation of traps activation energy is analyzed. It is found that, under the thermal activation of electron (1B- and 3B-centers) and hole (CN- centers) traps, the TL processes of first and second kinetics order dominate respectively. A mechanism of electron tunneling from the deep traps to 1B- and 3B-centers in h-BN following the registered TL processes is being discussed. An energy-level diagram describing the thermally stimulated mechanisms of charge carriers redistribution was proposed for the UV-irradiated h-BN.Graphical abstract
机译:<![CDATA [ 抽象 通过光谱分辨的热致发光(TL)技术的方法研究了UV辐照的H-BN微隆的细节。使用曲线形状,各种加热速率和初始上升方法估计活性捕获中心的动力学参数(激活能量,有效频率因子和动力学顺序),形成复杂多藏族系统。结果表明,380和425·nm频带中的T1是由从1b和3b中心水平的电子的辐射转变引起,其中4.2℃的电气从导电带底部低于碳水平(c n -centers),激活能量为1.4 eV,分别在价带顶部上方。分析了在陷阱激活能量评估中的发光温度淬火的考虑。发现,在电子激活(1B-和3B中心)和孔(C N - 中心)陷阱,首先的TL过程和第二动力学命令占主导地位。讨论了在注册的TL工艺之后的H-BN中深阱到1B-和3B中心的电子隧穿的机理。提出了用于紫外线辐照的H-BN的热刺激电荷载体再分配机制的能量水平图。 图形抽象

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