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首页> 外文期刊>Laser physics letters >Ultrafast photoinduced charge dynamics in colloidal CdSe/CdS quantum dots in toluene
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Ultrafast photoinduced charge dynamics in colloidal CdSe/CdS quantum dots in toluene

机译:甲苯胶体Cdse / Cds量子点中的超快光学诱导电荷动力学

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摘要

We studied the dynamics of photoinduced charge carriers in core/shell CdSe/CdS quantum dots (QDs) of two sizes, 2.0 and 2.9 nm, in a toluene colloid by femtosecond up-conversion spectroscopy. We observed the luminescence kinetics of QDs excited by 50 fs laser pulses at a wavelength of 385 nm. The modeling of experimental data showed that a 0.5 ps rise of the luminescence intensity corresponds to the process of electron thermalization. The two-exponential luminescence decay with characteristic times in the picosecond range corresponds to populating of two types of traps, which we associate with core and shell defects. Electron- hole recombination process does not affect the shape of the luminescence kinetics in the picosecond range. A comparative analysis indicates that the concentration of defects in 2.0nm QDs is greater than that in 2.9nm QDs, while potential wells, which charge carriers eventually escape due to thermal activation, are deeper for 2.9 run QDs.
机译:通过飞秒上转换光谱法在甲苯胶体中研究了两种尺寸/壳CdSe / Cds量子点(QDS)的光致电荷载体的动态。 我们观察到QDS的发光动力学在385nm波长下由50 fs激光脉冲激发。 实验数据的建模表明,发光强度的0.5ps升高对应于电子热化过程。 双指数发光衰减衰减,具有皮比秒范围内的特征时间对应于两种类型的陷阱,我们与核心和壳缺陷相关联。 电子空穴重组过程不会影响皮秒范围内发光动力学的形状。 比较分析表明2.0nm QDS中的缺陷浓度大于2.9nm QDS中的缺陷,而电影载波最终因热激活而逸出,更深的2.9运行QD。

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