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A novel low power UWB cascode SiGe BiCMOS LNA with current reuse and zero-pole cancellation

机译:具有电流重用和零极点消除的新型低功耗超宽带共源共栅SiGe BiCMOS LNA

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摘要

A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) application. The LNA is composed of cascode input stage and common emitter (CE) output stage with dual loop feedbacks. The novel cascode-CE current reuse topology replaces the traditional two stages topology so as to obtain low power consumption. The emitter degenerative inductor in input stage is adopted to achieve good input impedance matching and noise performance. The two poles are introduced by the emitter inductor, which will degrade the gain performance, are cancelled by the dual loop feedbacks of the resistance-inductor (RL) shunt-shunt feedback and resistance-capacitor (RC) series-series feedback in the output stage. Meanwhile, output impedance matching is also achieved. Based on TSMC 0.35 μm SiGe BiCMOS process, the topology and chip layout of the proposed LNA are designed and post-simulated. The LNA achieves the noise figure of 2.3-4.1 dB, gain of 18.9-20.2 dB, gain flatness of ±0.65 dB, input third order intercept point (IIP_3) of -7 dBm at 6 GHz, exhibits less than 16 ps of group delay variation, good input and output impedances matching, and unconditionally stable over the whole band. The power consumption is only 18 mW.
机译:针对超宽带(UWB)应用,提出了一种具有电流重用和零极点消除功能的低功耗共源共栅SiGe BiCMOS低噪声放大器(LNA)。 LNA由共源共栅输入级和共发射极(CE)输出级组成,并具有双环路反馈。新型的cascode-CE电流重用拓扑取代了传统的两级拓扑,从而获得了低功耗。输入级采用发射极退化电感,以实现良好的输入阻抗匹配和噪声性能。发射极电感引入了两个极点,这将降低增益性能,输出中的电阻-电感(RL)分流-并联反馈和电阻-电容器(RC)串联-串联反馈的双环路反馈会抵消这两个极点阶段。同时,还实现了输出阻抗匹配。基于台积电0.35μmSiGe BiCMOS工艺,设计并后仿真了所提出的LNA的拓扑和芯片布局。 LNA在6 GHz时达到2.3-4.1 dB的噪声系数,18.9-20.2 dB的增益,±0.65 dB的增益平坦度,-7 dBm的输入三阶截取点(IIP_3),群延迟小于16 ps变化,良好的输入和输出阻抗匹配以及在整个频带上无条件稳定。功耗仅为18 mW。

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