首页> 外文期刊>Materials Technology >Microstructure, leakage current and dielectric tunability properties of W6+:Na0.5Bi0.5TiO3/Fe3+:Na0.5Bi0.5TiO3 bilayered thin film
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Microstructure, leakage current and dielectric tunability properties of W6+:Na0.5Bi0.5TiO3/Fe3+:Na0.5Bi0.5TiO3 bilayered thin film

机译:微观结构,漏电流和介电可调性,W6 +:Na0.5bi0.5tio3 / Fe3 +:Na0.5bi0.5tio3双层薄膜

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摘要

The bilayered Na0.5Bi0.5Ti0.99W0.01O3/Na0.5Bi0.5Ti0.98Fe0.02O3 (NBTW/NBTFe) structure was grown on indium tin oxide/glass using a modified sol-gel process. The microstructure, and insulating and dielectric properties were investigated. X-ray diffraction indicates that the bilayered thin film is well crystallized with a phase-pure perovskite structure. The thin film shows a uniform surface without crack, and no interface is found between the NBTW/NBTFe structure. In the dielectric constant-electric field curves for dielectric measurement, abnormal loops are observed under the low electric field or high frequency. A maximum value of 35.4% for dielectric tunability is obtained when an electric field of +/- 500 kV/cm is applied, which can be mainly due to the good insulating characteristic with low leakage current. Furthermore, a dielectric constant of 484, dielectric loss of 0.07 as well as figure of merit of 5.1 can be observed at the frequency of 100 kHz. These findings can be taken as a base for further improving the electrical performance of NBT-based thin films.
机译:使用改性溶胶 - 凝胶工艺在氧化铟锡/玻璃上生长双层Na0.5bi0.5TI0.99w0.01O3 / Na0.5bi0.5ti0.98Fe0.02O3(NBTW / NBTFE)结构。研究了微观结构和绝缘和介电性能。 X射线衍射表明双层薄膜用相纯钙钛矿结构良好结晶。薄膜显示出均匀的表面而没有裂缝,并且在NBTW / NBTFE结构之间没有发现界面。在用于介电测量的介电常数 - 电场曲线中,在低电场或高频下观察到异常环。当施加+/- 500kV / cm的电场时,获得最大值35.4%,这主要是由于具有低漏电流的良好绝缘特性。此外,可以在100kHz的频率下观察到484的介电常数,0.07的介电损耗以及5.1的优点。这些发现可以作为进一步提高基于NBT的薄膜电性能的基础。

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