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The Controllable Phase Structure and Related Properties of NbN-NbB2 Nanocomposite Films at Different Bias Voltages

机译:不同偏置电压下NBN-NBB2纳米复合膜的可控相结构及相关性能

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Nanocomposite NbN-NbB2 films were prepared on Si (100) substrates by using multi-target magnetron co-sputtering system with different bias voltages (Vb). The effects of the substrate bias voltage on the phase transition and hardness of the obtained films were investigated via X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), high resolution transmission electron microscope (HRTEM) and nano-indentation measurement. The results revealed that the best crystallization appeared at -160 V, where are the face-centered cubic (fcc) NbN and hexagonal close-packed (hcp) NbN coexisted in the films and fcc-NbN with (111) preferred orientation was a major phase. The films became much denser and more compact with increasing substrate bias. Meanwhile, hardness and elastic modulus were correspondingly elevated, which can be attributed to the amorphous NbB2 embedded in the crystals of NbN and the amorphous NbB2 were surrounded by crystalline of NbN. The maximum hardness and elastic modulus of films with applied bias -160 V were 26.542 GPa and 291.154 GPa, respectively, and the films also showed the better thermal stability and oxidation resistance properties. The further increase of the substrate bias voltage led to a phase transition from (fcc) NbN (111) to (hcp) NbN (110). This work also demonstrated that the decreased crystallinity induced at higher bias voltage led to the decrease in the mechanical properties.
机译:通过使用具有不同偏置电压(VB)的多目标磁控凝固系统在Si(100)基板上制备纳米复合NBN-NBB2膜。通过X射线衍射(XRD),扫描电子显微镜(SEM),高分辨率透射电子显微镜(高分辨率透射电子显微镜(高分辨率透射电子显微镜)研究基板偏置对所得薄膜的相变和硬度的影响。 HRTEM)和纳米压痕测量。结果表明,最佳结晶出现在-160V,在薄膜中共中心的立方(FCC)NBN和六边形近填充(HCP)NBN,与(111)优选取向共存是一个主要的阶段。随着基板偏置的增加,薄膜变得更加密集和更紧凑。同时,硬度和弹性模量相应地升高,其可归因于嵌入NbN晶体中的无定形Nbb2,并且通过Nbn的结晶包围无定形Nbb2。具有施加偏压-160V的薄膜的最大硬度和弹性模量分别为26.542GPa和291.154GPa,并且薄膜还显示出更好的热稳定性和抗氧化性能。基板偏置电压的进一步增加导致从(FCC)NBN(111)到(HCP)NBN(110)的相位转变。该工作还证明,在较高偏置电压下诱导的结晶度降低导致机械性能的降低。

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