Design of wafer-scale uniform Au nanotip array by ion irradiation for enhanced single conductive filament resistive switching

摘要

Here, we report a simple and low-cost method to fabricate wafer-scale uniform and flexible nanotip array substrates via ion irradiation and replica-molding process. The diameter of the nanotip can be accurately modulated, and the minimum tip size can reach approximately 50 nm. Then, we exploit this nanotip array to fabricate high-performance single conductive filament (CF) resistive switching memory. As a result, the tailored Ag/HfO2/Au nanotip resistive random access memory (RRAM) devices on polyethylene terephthalate (PET) substrates show good flexibility, a large switching window over 10(8), an ultralow off-state current of 10(-12) A, and low and uniform programming voltages. It is believed that the randomness of the CFs is depressed by the enhanced local electric field near the Au nanotips, contributing to the reliable performance of the tailored Ag/HfO2/Au nanotip/PET-based RRAM devices. This novel method paves the way for fabrication of large single-filament flexible RRAM device arrays.