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One-dimensional thermoelectrics induced by Rashba spin-orbit coupling in two-dimensional BiSb monolayer

机译:Rashba旋转轨道耦合诱导的二维热电量在二维BISB单层中的旋转轨道耦合

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摘要

Rashba spin-orbit coupling (SOC) in low dimensional systems plays a leading role in carrier transport under external stimuli such as electric and thermal fields. Via the first-principles calculation combined with Boltzmann transport theory, we investigate the effect of Rashba SOC on the thermoelectric performance of two-dimensional (2D) bismuth antimony (BiSb) monolayer. We find that Rashba SOC significantly promotes the thermoelectric performance. The calculated ZT value with Rashba SOC is 0.32 at room temperature, which is almost two times higher than that in spin-degenerate case (0.18). The enhanced thermoelectric response is attributed to Rashba SOC induced one-dimensional-like density of states and a prolonged carrier lifetime in the 2D BiSb sheet. Furthermore, the high thermoelectric performance is also beneficial from low thermal conductivity because the internal electric field in the Rashba system introduces the anharmonicity of phonons in BiSb monolayer. Our work sheds new light on the design of high-performance thermoelectric devices or materials in the inversion-symmetry broken systems with Rashba spin-splitting.
机译:低维系统中的Rashba旋转轨道耦合(SoC)在外部刺激之类的外部刺激之类的载波运输中起着主导作用。通过第一原理计算与Boltzmann运输理论相结合,我们研究了Rashba SoC对二维(2D)铋锑(BISB)单层的热电性能的影响。我们发现Rashba SoC显着促进了热电性能。使用Rashba SoC的计算ZT值在室温下为0.32,比旋转退化案例(0.18)高出两倍。增强的热电响应归因于RASHBA SOC诱导的一维的状态密度和2D BISB板中的延长载体寿命。此外,高温性能也有益于低导热率,因为RASHBA系统中的内部电场引入了BISB Monolayer中的声子的Anharmonicity。我们的工作在具有Rashba旋转分裂的反转对称破碎系统中的高性能热电装置或材料设计上的新光。

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