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Miniaturized high-performance metallic 1T-Phase MoS2 micro-supercapacitors fabricated by temporally shaped femtosecond pulses

机译:小型化高性能金属1T相MOS2微型超级电容器,由颞型飞秒脉冲制造

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摘要

The recent development of wearable and portable microelectronic devices requires energy storage devices to be miniaturized; micro-supercapacitors (MSCs), as one of the most outstanding candidates, have great potential in future electronic devices. However, in the miniaturization of MSCs, the maintenance of electrochemical performance remains a key challenge. Herein, this study proposes a simple, one-step, mask-free and high-resolution fabrication method for high-performance 1T MoS2 MSCs in atmosphere. The method involves the direct writing of restacked 1T MoS2 films by a temporally shaped femtosecond laser. Specifically, femtosecond laser pulses are temporally shaped to control the transient electron temperature and material absorption for achieving highresolution fabrication. Excellent electrode material properties and ultrashort ion transfer distance enable the MSCs to exhibit optimal performances with an ultrahigh power density (14 kW cm(-3)), ultrahigh energy density (15.6 mWh cm(-3)) and large areal capacitance (36 mF cm(-2)). Notably, such miniaturized MSCs in a 100 x 100 mu m(2) area own superior frequency responses (1221 Hz) and time constant (0.82 ms), which are suitable for AC line filters and other high-power demanded electronic devices. This method successfully solves the problem of maintaining performance in the miniaturization of MSCs, allowing next-generation microelectronic devices to be developed.
机译:可穿戴和便携式微电子器件的最近开发需要省能的能量存储装置;微超级电容器(MSCS),作为最优秀的候选人之一,在未来的电子设备中具有很大的潜力。然而,在MSC的小型化中,电化学性能的维持仍然是一个关键挑战。这里,本研究提出了一种用于大气中的高性能1T MOS2 MSC的简单,一步,无掩模和高分辨率制造方法。该方法涉及通过时间形状的Femtosecond激光直接写入恢复的1T MOS2膜。具体地,飞秒激光脉冲在时间上成形为控制瞬态电子温度和用于实现高次化制造的材料吸收。优异的电极材料特性和超级离子传递距离使MSC能够具有超高功率密度(14kW cm(-3)),超高能量密度(15.6 mwh cm(-3))和大的面积电容(36mF cm(-2))。值得注意的是,在100×100μm(2)区域中的这种小型化MSC在100×100μm(2)区域拥有的优异频率响应(1221Hz)和时间常数(0.82ms),其适用于交流线滤波器和其他高功率要求的电子设备。该方法成功解决了在MSC的小型化中保持性能的问题,允许开发下一代微电子器件。

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