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首页> 外文期刊>Moscow University Physics Bulletin >Exploring the Influence of a Focusing and Gaussian Profile Electron Beam in SEM Imaging through Monte Carlo Simulation
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Exploring the Influence of a Focusing and Gaussian Profile Electron Beam in SEM Imaging through Monte Carlo Simulation

机译:通过蒙特卡罗模拟探索聚焦和高斯型材电子束在SEM成像中的影响

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摘要

Gaussian profile is conventionally assumed as the probe shape of the incident electron beam in theoretical analysis of dimensional measurements by a scanning electron microscope (SEM). However, it is not suitable for samples with small and tiny structure. In this paper, a model of a focusing electron beam with finite width due to aberration was used in simulating the SEM image of gold particles/balls on a carbon substrate. An effective electron beam shape (EEBS) was displayed and was found that it deviates significantly from the Gaussian profile. The difference between images simulated by Monte Carlo method with ideal electron incident beam, electron beam focusing model and with ideal beam incident then convoluted by Gaussian profile were discussed in detail. Furthermore, the influence of external electric field effect: full extraction and no extraction for imaging were studied.
机译:通过扫描电子显微镜(SEM)通常假设作为入射电子束的尺寸测量的理论分析中的探针形状。 然而,它不适用于具有小而微小的结构的样品。 在本文中,用于模拟碳基板上的金颗粒/球的SEM图像,用于模拟碳基底上的微颗粒的聚焦电子束的模型。 显示有效的电子束形状(EEBS),并发现其偏离高斯分布显着偏离。 详细讨论了具有理想电子事件光束,电子束聚焦模型和理想光束入射的Monte Carlo方法模拟的图像之间的差异。 此外,研究了外部电场效应的影响:研究了全萃取,没有提取成像。

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