Characteristics of graphene embedded indium tin oxide (ITO-graphene-ITO) transparent conductive films

摘要

To obtain high transparecy conductive films (TCFs), graphene embedded indium tin oxide (ITO) TCFs (ITO-graphene-ITO) were formed (I-G-I), using ITO sputtering, and the exfoliation/transfer process of chemical vapor deposition (CVD) grown graphene. Compared with ITO-graphene (I-G), I-G-I TCFs showed degradation in transmittance, and in figure of merits(FOM) despite enhanced conductivity. After annealing, both transmittance and conductivity improved; however, were not dependent on the embedded graphene multilayers in the I-G-I structure. From the Raman spectra results, it was possible to investigate degradation of the graphene layers' 2D structures, caused by sputtering damage which occurred during the deposition of ITO onto the I-G structure.