Growth of Ge1-xSix (x = 0 to 0.5) single crystals by a zone melting method

摘要

Ge1-xSix graded crystals with 0 < x < 0.66 were grown by a zone melting method in a double ellipsoid mirror furnace. They; have a diameter of 9 mm and grown lengths between 27 and 80 mm. Single crystalline regions reached a maximum Si concentration of 50 at%, determined by EDX and ECP measurements. Starting: with a Ge seed, a defined concentration profile was obtained by a wedge-shaped arrangement of the feed material. The concentration profiles could be predicted by a simulation program. [References: 19]