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A 0.2-3.3 GHz 2.4 dB NF 45 dB gain CMOS current-mode receiver front-end

机译:0.2-3.3 GHz 2.4 dB NF 45 dB增益CMOS电流模式接收器前端

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A CMOS fully differential current-mode front-end for SAW-less receivers is proposed. The noise-canceling LNTA has a main path of the common-gate (CG) stage and an auxiliary path of the inverter stage. A current mirror is used to combine the signals from the main and auxiliary paths in current mode. The stacked nMOS/pMOS configurations improve their power efficiency. The traditional stacked tri-state inverter as D-latch replaced by the discrete inverter and transmission gate enables a reduced supply voltage of divider core. LO generator based on the improved divider provides quarter LO signals to drive the proposed LNTA-shared receiver front-end. Simulation results in 180 nm CMOS indicate that the integrated receiver front-end provides an NF of 2.4 dB, and a maximum gain of 45 dB from 0.2 to 3.3 GHz. The in-band (IB) and out-of-band (OB) IIP3 of 2.5 dBm and 4 dBm, are obtained, respectively. With CMOS scaling down continuously, CMOS devices are providing increased transit frequency and reduced intrinsic parasitics which are important for radio frequency (RF) and millimeter-wave applications. As a promising solution, CMOS RF delivers comparable performance to silicon bipolar and GaAs devices but at a much lower cost and higher integration level. Supply voltage reduction with CMOS scaling down also poses a stringent linearity requirement. Avoiding the conventional trade-off between the supply voltage and linearity headroom, the proposed receiver front-end based on the current mode principle is with weak linearity dependency on the supply voltage and provides excellent anti-blocker interference capability.
机译:提出了一种用于脱脂接收器的CMOS全差分电流模式前端。噪声消除LNTA具有公共栅极(CG)级的主路径和逆变器级的辅助路径。当前镜子用于将来自主模式的主和辅助路径的信号组合。堆叠的NMOS / PMOS配置提高了它们的功率效率。传统的堆叠三态逆变器作为由离散逆变器和传输栅极代替的D闩锁,可以降低分隔芯的电源电压。基于改进的分频器的LO发电机提供Quarter Lo信号以驱动所提出的LNTA共享接收器前端。仿真结果180nm CMOS指示集成接收器前端提供2.4 dB的NF,最大增益为0.2至3.3 GHz。分别获得带内的(IB)和带外(OB)IIP3为2.5 dBm和4 dBm。使用CMOS连续缩放,CMOS器件正在提供增加的传输频率和降低的内在寄生,这对于射频(RF)和毫米波应用很重要。作为一个有前途的解决方案,CMOS RF将性能与硅双极和GAAS设备提供相当的性能,但成本低得多的成本和更高的集成水平。通过CMOS缩放的电源降低降低也构成了严格的线性需求。避免电源电压和线性净空室之间的传统折衷,基于电流模式原理的提出的接收器前端是线性度依赖性的电源电压较弱,提供出色的抗阻滞剂干扰能力。

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