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首页> 外文期刊>Materials science in semiconductor processing >Highly-transparent and conductive CuI films obtained by a redirected low-cost and electroless two-step route: Chemical solution deposition of CuS2 and subsequent iodination
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Highly-transparent and conductive CuI films obtained by a redirected low-cost and electroless two-step route: Chemical solution deposition of CuS2 and subsequent iodination

机译:通过重定向的低成本和化学型两步路线获得的高度透明和导电铜膜:CUS2的化学溶液沉积和随后的碘化

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摘要

A simple, low-cost, electroless, and industrially scalable solution/vapor two-step strategy for the synthesis of highly-transparent and conductive CuI thin films is presented. The process is based in the coupling of the versatile chemical solution deposition technique to a gas-solid reaction method. It consists of the chemical deposition of CuS2 thin films (which can be performed over any kind of substrate) and their subsequent halidization by a gas-solid reaction with iodine vapor. The CuI obtained by this route is as transparent and conductive as the ones obtained by physical techniques coupled to an iodination reaction. Particularly, we present a 60-nm CuI sample obtained by iodination of a chemical-solution-deposited 21-nm CuS2, which is practically similar to the best reported in the literature, in terms of absence of the common frosted-glass-like appearance. The integrated transmittance in the visible region of this CuI thin film is 0.85, compared with the 0.91 of the glass slide used as a substrate, which is an indication of the high transparence of the synthesized CuI material. Hall-Effect and optical characterization of a thicker CuI thin film (146 nm) obtained by the solution/vapor two-step process presented here resulted in a p-type conductivity, a resistivity equal to 1.1 Omega cm, a hole concentration of 1.3x10(19) cm(-3), a hole mobility of 0.43 cm(2)/V.s, an integrated transmittance in the visible region of 0.65, and, according to the Z(1,2) exciton absorption, an energy band gap of 3.05 eV. Analyses by XPS and XRD, as well as a rigorous chemical analysis and an accurate Rietveld refinement, confirmed that the composition of the obtained material is Cu0.85 +/- 0.06I with a zincblende structure, thus presenting copper vacancies; this composition explains the p-type conductivity of the synthesized material. All these results demonstrate that the two-step process presented here is a promising alternative to those including conventional physical technique
机译:提出了一种简单,低成本,无电和工业上可扩展的解决方案/蒸气两步策略,用于合成高度透明和导电铜薄膜。该方法基于通用化学溶液沉积技术的偶联至气体固体反应方法。它包括CUS2薄膜的化学沉积(可在任何种类的基材上进行)和随后通过与碘蒸气的气体固体反应的随后卤化。通过该途径获得的CUI作为通过与碘化反应的物理技术获得的透明和导电。特别是,我们介绍了通过碘化溶液沉积的21-nm CUS2获得的60nm Cui样品,其实际上与文献中的最佳报道,在没有共同的磨砂玻璃样外观方面。与用作基材的玻璃载玻片的0.91相比,该Cui薄膜的可见区域中的集成透射率为0.85,这是合成的Cui材料的高透明度的指示。通过这里呈现的溶液/蒸汽两步方法获得的较厚Cui薄膜(146nm)的霍尔效应和光学表征导致p型导电性,等于1.1ωcm的电阻率,孔浓度为1.3x10 (19)cm(-3),空穴迁移率为0.43cm(2)/ vs,在0.65的可见区域中的集成透射率,并且根据Z(1,2)激子吸收,能带隙的能带隙3.05 ev。通过XPS和XRD分析,以及严格的化学分析和准确的RIETVELD细化,证实了所得材料的组成是CU0.85 +/- 0.06i,其中ZINCBLENDE结构,从而呈现铜空缺;该组合物解释了合成材料的p型导电性。所有这些结果表明,这里提出的两步过程是对包括常规物理技术的有前途的替代方案

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