机译:栅极介电接口对高性能有机薄场晶体管陷阱状态的临界影响和高性能有机薄型场晶体管的累积电荷
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
UESTC Sch Optoelect Sci &
Engn Chengdu 610054 Sichuan Peoples R China;
Insulator/semiconductor interface; Trap states; Cumulative charge; Organic thin film transistor;
机译:栅极介电接口对高性能有机薄场晶体管陷阱状态的临界影响和高性能有机薄型场晶体管的累积电荷
机译:栅介电界面对高性能有机场效应晶体管接触电阻的关键影响
机译:介电-介电界面处的俘获态对具有双层栅介电层的有机场效应晶体管稳定性的影响
机译:用于高性能和低功耗有机薄膜晶体管的有机/无机混合栅极电介质
机译:聚合物电介质中的电荷俘获和有机供体-受体结处的电势-界面和体贡献的作用。
机译:凹版印刷薄有机电介质的高性能柔性底栅有机场效应晶体管
机译:具有超薄等离子体 - 氮化SiON电介质的P沟道金属氧化物半导体场效应晶体管负偏置温度不稳定性下的界面阱和氧化物电荷产生