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机译:Al / La2O3 / ZrO2 / 4H-SIC MOS器件的性能增强,带Laon作为界面钝化层
Kavayitri Bahinabai Chaudhari North Maharashtra U Mat &
Devices Lab Nanoelect Jalgaon 425001 Maharashtra India;
Kavayitri Bahinabai Chaudhari North Maharashtra U Mat &
Devices Lab Nanoelect Jalgaon 425001 Maharashtra India;
Kavayitri Bahinabai Chaudhari North Maharashtra U Mat &
Devices Lab Nanoelect Jalgaon 425001 Maharashtra India;
Kavayitri Bahinabai Chaudhari North Maharashtra U Mat &
Devices Lab Nanoelect Jalgaon 425001 Maharashtra India;
Kavayitri Bahinabai Chaudhari North Maharashtra U Mat &
Devices Lab Nanoelect Jalgaon 425001 Maharashtra India;
Bilayer high-k; LaON passivation; PEALD; Dielectric breakdown field; Fowler-Nordheim (FN) tunneling;
机译:Al / La2O3 / ZrO2 / 4H-SIC MOS器件的性能增强,带Laon作为界面钝化层
机译:Laon / Si双钝化层和氟等离子体处理改善HfTiON栅介电Ge MOS电容器的界面和电学性能
机译:通过使用TaON / LaON双钝化夹层改善Ge MOS电容器的界面和电学性能
机译:Ge-MOSFET中的界面钝化的综合研究—控制高性能器件的界面层
机译:有机电子设备中的修改:发现使用界面自组装单分子层提高性能的机制。
机译:增强P3HT:PCBM –基于MoS3的具有界面层的H2演化型光电阴极的性能
机译:通过使用TaON / LaON双钝化夹层改善Ge MOS电容器的界面和电学性能