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Lower-bound dislocation density mapping in microcoined tantalum using high-resolution electron backscatter diffraction

机译:使用高分辨率电子反散射衍射微荷钽中的较低的位错密度映射

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摘要

High-resolution electron backscatter diffraction (HR-EBSD) is used to map the geometrically necessary dislocation (GND) density in the cross-sections of annealed, rolled, and microcoined tantalum foils that are typical targets used in modern laser-induced compression materials science studies. The microcoined samples are characteristic of microforming, where the deformation length scale is on the order of the grain size (similar to 50 mu m). In particular, inhomogeneities in dislocation density maps across 0.1-1 mm regions of interest are compared with expectations from slip line field approximations. The average HR-EBSD GND dislocation density measurements in various annealed and cold worked tantalum samples are compared with corresponding dislocation density approximations from microhardness measurements. GND densities in the range 10(13) - 10(15) m(-2) are typical.
机译:高分辨率电子反向散射衍射(HR-EBSD)用于在退火,轧制和微荷钽箔的横截面中映射几何所需的位错(GND)密度,这些钽箔是现代激光诱导的压缩材料科学中使用的典型目标 学习。 微升压样品是微铸的特征,其中变形长度秤在晶粒尺寸(类似于50μm)的顺序上。 特别地,与滑线场近似的期望进行比较跨越0.1-1mm的感兴趣区域的位错密度图中的不均匀性。 将各种退火和冷加工钽样品中的平均HR-EBSD GND位错密度测量与来自微硬度测量的相应位错密度近似进行比较。 10(13) - 10(15)m(-2)范围内的GND密度是典型的。

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