...
首页> 外文期刊>Materials Characterization >Epitaxial growth of BiFeO3 films on SrRuO3/SrTiO3
【24h】

Epitaxial growth of BiFeO3 films on SrRuO3/SrTiO3

机译:SRRUO3 / SRTIO3上BIFEO3薄膜外延生长

获取原文
获取原文并翻译 | 示例
           

摘要

We have investigated the influence of growth parameters on the surface morphology of BiFeO3 (BFO) thin films prepared by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 buffer layers. High quality epitaxial BFO thin films are obtained by controlling the laser pulse energy (E-L), substrate temperature (T-s) and oxygen partial pressure (Po-2). It is found that the surface morphology is sensitive to both Ts and Poe, and the root-mean square roughness decreases initially and increases subsequently with increasing Ts or Po-2. Epitaxial BFO thin films with atomically smooth surface are successfully prepared in step flow growth mode at E-L = 100 mJ, T-s = 700 degrees C and Po-2 = 13 Pa. Using X-ray diffraction, high-resolution cross-sectional transmission electron microscopy and piezoelectric force microscopy, the crystallinity, epitaxy and ferroelectricity of the BFO thin films prepared in optimal growth conditions have been studied. A growth diagram is constructed to delineate the growth window of high quality epitaxial BFO films with step and terrace topography.
机译:我们研究了通过SRRUO3缓冲层对SRTOIO3(001)衬底上脉冲激光沉积制备的BifeO3(BFO)薄膜表面形态的影响。通过控制激光脉冲能量(E-L),衬底温度(T-S)和氧分压(PO-2)来获得高质量的外延BFO薄膜。结果发现,表面形态对TS和POE敏感,并且根本平均粗糙度最初降低,随后随后增加TS或PO-2。具有原子平滑表面的外延BFO薄膜在EL = 100MJ的步骤流速生长模式中成功制备,TS = 700摄氏度和PO-2 = 13Pa。使用X射线衍射,高分辨率横截面透射电子显微镜并研究了在最佳生长条件下制备的BFO薄膜的结晶度,外延和铁电性的结晶度,外延和铁电性。构建生长图以描绘高质量外延BFO薄膜的生长窗口与步进和露台地形。

著录项

  • 来源
    《Materials Characterization》 |2017年第2017期|共7页
  • 作者单位

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

    East China Normal Univ Dept Elect Engn Key Lab Polar Mat &

    Devices Minist Educ Shanghai 200241 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

    BiFeO3; Pulsed laser deposition (PLD); Epitaxial growth;

    机译:BifeO3;脉冲激光沉积(PLD);外延生长;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号