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Giant magnetoelectric effect in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate

机译:铁电基材垂直磁化Pt / Co / Ta超薄膜中的巨型磁电效应

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摘要

Perpendicularly magnetized layers are essential for information storage to increase the storage density. Modulating perpendicular magnetization by an electric field offers a promising solution to lower energy consumption. Here, we demonstrate a remarkable electric field modulation of perpendicular magnetization in perpendicularly magnetized Pt/Co/Ta ultrathin films on a ferroelectric substrate. By measuring the anomalous Hall effect under in situ electric fields, we observe a giant magnetoelectric effect with the large converse magnetoelectric coefficient of -2.1 x 10(-6) s m(-1) at H-perpendicular to = -20 Oe and -0.9 x 10(-6) s m(-1) at H-perpendicular to = 0 Oe, which is comparable to that in multiferroic heterostructures with in-plane magnetization. Additionally, Kerr imaging shows that electric fields observably affect magnetic domain structures of the Pt/Co/Ta ultrathin films indicating a giant magnetoelectric effect. We further measure in situ X-ray diffraction and X-ray reflectivity with electric fields, which suggests that this giant magnetoelectric effect is attributed to strain-mediated magnetoelectric coupling and is closely related to electric-field-varied interface roughness. Our findings highlight the role of interface roughness in exploring electrical control of perpendicular magnetization.
机译:垂直磁化层对于信息存储来提高存储密度至关重要。通过电场调制垂直磁化,提供了较低能耗的有希望的解决方案。这里,我们证明了在铁电基板上垂直磁化的Pt / Co / Ta超薄膜垂直磁化的显着电场调制。通过在原位电场下测量异常厅效应,我们观察到H垂直于= -20°OE的大逆磁电系数-2.1×10(-6)SM(-1)的巨型磁电效应。-0.9在H垂直于= 0 OE的X 10(-6)SM(-1),其与具有面内磁化的多体异质结构中的相当。另外,Kerr成像表明,电场可观察地影响Pt / Co / Ta超薄膜的磁畴结构,其表示巨型磁电效应。我们进一步利用X射线衍射和与电场的X射线反射率进一步测量,这表明该巨型磁电效应归因于应变介导的磁电耦合,并且与电场变化的界面粗糙度密切相关。我们的研究结果强调了界面粗糙度在探索垂直磁化的电气控制方面的作用。

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  • 来源
    《Materials Horizons》 |2020年第9期|共8页
  • 作者单位

    King Abdullah Univ Sci &

    Technol Phys Sci &

    Engn Div Thuwal 239556900 Saudi Arabia;

    Univ Sci &

    Technol China Anhui Lab Adv Photon Sci &

    Technol Hefei Natl Lab Phys Sci Microscale Hefei 230026 Peoples R China;

    King Abdullah Univ Sci &

    Technol Phys Sci &

    Engn Div Thuwal 239556900 Saudi Arabia;

    Univ Sci &

    Technol China Anhui Lab Adv Photon Sci &

    Technol Hefei Natl Lab Phys Sci Microscale Hefei 230026 Peoples R China;

    King Abdullah Univ Sci &

    Technol Phys Sci &

    Engn Div Thuwal 239556900 Saudi Arabia;

    King Abdullah Univ Sci &

    Technol Comp Elect &

    Math Sci &

    Engn Div Thuwal 239556900 Saudi Arabia;

    Tsinghua Univ Dept Phys Beijing 100084 Peoples R China;

    Tsinghua Univ Dept Phys Beijing 100084 Peoples R China;

    Univ Sci &

    Technol China Anhui Lab Adv Photon Sci &

    Technol Hefei Natl Lab Phys Sci Microscale Hefei 230026 Peoples R China;

    King Abdullah Univ Sci &

    Technol Phys Sci &

    Engn Div Thuwal 239556900 Saudi Arabia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
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