Non-layered 2D materials toward advanced photoelectric devices: progress and prospects

摘要

The emergence of novel 2D materials has stimulated worldwide research enthusiasm in both fundamental research and applied technologies in the realm of optoelectronics. Here, we provide a comprehensive overview on the recent advancements of photoelectric devices based on non-layered 2D materials (NL2DMs), fascinating fresh blood of the 2D family. We begin with an elaboration of the common approaches to implement 2D geometry of non-layered materials, including van der Waals epitaxy, 2D template assisted topotactic conversion, the space-confined growth method, the self-limited growth method, and the hot-pressing method. Then, we present photodetectors built on NL2DMs by dividing them into pristine metal-semiconductor-metal photodetectors and heterojunction photodetectors (HJPDs). Next, we summarize novel NL2DM optoelectronic devices, including polarization-sensitive photodetectors and flexible photodetectors. After this, we introduce strategies toward improving the photosensitivity of NL2DM photodetectors based on device structure engineering. Subsequently, we describe photovoltaic devices based on NL2DMs. Finally, we highlight the key challenges facing further development in this rapidly progressing research field, along with proposed strategies addressing these issues.