Crystal Defect and Dislocation Analysis of SiC Wafers by Transmission Polarization Microscopy

摘要

4H-SiC single crystal wafers need to be analyzed carefully because they still have a higher crystal defect density than silicon wafers. As a method for non-destructive evaluation of crystal defects, synchrotron radiation x-ray topography is mainly used in a large synchrotron radiation facility, where is, however, not easily used. Therefore, as a nondestructive and convenient method for evaluating crystal defects in SiC wafers, we examined a technique for observing strain inside crystals caused by crystal dislocation using transmission polarization microscopy. This method is expected to be used in the detailed analysis of crystal dislocation that has been difficult by synchrotron radiation x-ray topograph alone, in acceptance inspections of commercially-available SiC epitaxial wafers, and in inspections of SiC device manufacturing processes.