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首页> 外文期刊>ACS nano >Electronic Properties of Meso-Superstructured and Planar Organometal Halide Perovskite Films: Charge Trapping, Photodoping, and Carrier Mobility
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Electronic Properties of Meso-Superstructured and Planar Organometal Halide Perovskite Films: Charge Trapping, Photodoping, and Carrier Mobility

机译:介观超结构和平面有机金属卤化物钙钛矿薄膜的电子性质:电荷俘获,光掺杂和载流子迁移率。

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摘要

Solution-processed organometal trihalide perovskite solar cells are attracting increasing interest, leading to high performances over 15% in thin film architectures. Here, we probe the presence of sub gap states in both solid and mesosuperstructured perovskite films and determine that they strongly influence the photoconductivity response and splitting of the quasi-Fermi levels in films and solar cells. We find that while the planar perovskite films are superior to the mesosuperstructured films in terms of charge carrier mobility (in excess of 20 cm~2 V~(-1) s~(-1)) and emissivity, the planar heterojunction solar cells are limited in photovoltage by the presence of sub gap states and low intrinsic doping densities.
机译:溶液处理的有机金属三卤化物钙钛矿型太阳能电池吸引了越来越多的兴趣,导致薄膜架构中的高性能超过15%。在这里,我们研究了固体和中超结构钙钛矿薄膜中亚间隙状态的存在,并确定它们强烈影响薄膜和太阳能电池中的光电导响应和准费米能级的分裂。我们发现,虽然平面钙钛矿薄膜在电荷载流子迁移率(超过20 cm〜2 V〜(-1)s〜(-1))和发射率方面优于中超结构薄膜,但平面异质结太阳能电池却是由于存在子间隙态和低本征掺杂密度而限制了光电压。

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