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Lithographically patterned thin activated carbon films as a new technology platform for on-chip devices

机译:光刻图案化的活性炭薄膜作为片上设备的新技术平台

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摘要

Continuous, smooth, visibly defect-free, lithographically patterned activated carbon films (ACFs) are prepared on the surface of silicon wafers. Depending on the synthesis conditions, porous ACFs can either remain attached to the initial substrate or be separated and transferred to another dense or porous substrate of interest. Tuning the activation conditions allows one to change the surface area and porosity of the produced carbon films. Here we utilize the developed thin ACF technology to produce prototypes of functional electrical double-layer capacitor devices. The synthesized thin carbon film electrodes demonstrated very high capacitance in excess of 510 F g~(-1) (>390 F cm~(-3)) at a slow cyclic voltammetry scan rate of 1 mV s~(-1) and in excess of 325 F g~(-1) (>250 F cm~(-3)) in charge-discharge tests at an ultrahigh current density of 45 000 mA g ~(-1). Good stability was demonstrated after 10 000 galvanostatic charge-discharge cycles. The high values of the specific and volumetric capacitances of the selected ACF electrodes as well as the capacity retention at high current densities demonstrated great potential of the proposed technology for the fabrication of various on-chip devices, such as micro-electrochemical capacitors.
机译:在硅晶片的表面上制备连续,平滑,无明显缺陷的光刻图案化活性炭膜(ACF)。根据合成条件,多孔ACF可以保持附着在初始基质上,也可以分离并转移到另一种感兴趣的致密或多孔基质上。调节活化条件可以改变生产的碳膜的表面积和孔隙率。在这里,我们利用已开发的薄ACF技术来生产功能性双电层电容器器件的原型。合成的碳薄膜电极在1 mV s〜(-1)的慢循环伏安扫描速率下在510 F g〜(-1)(> 390 F cm〜(-3))时显示出很高的电容。在45,000 mA g〜(-1)的超高电流密度下进行充放电测试时,超过325 F g〜(-1)(> 250 F cm〜(-3))。在10000次恒电流充放电循环后,证明了良好的稳定性。所选ACF电极的比电容和体积电容的高值以及在高电流密度下的容量保持率证明了所提出的技术在制造各种片上器件(如微电化学电容器)方面的巨大潜力。

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