...
首页> 外文期刊>Electrochemistry communications >A new method for the preparation of Ru quasi single crystal surfaces
【24h】

A new method for the preparation of Ru quasi single crystal surfaces

机译:一种制备ru准单晶表面的新方法

获取原文
获取原文并翻译 | 示例
           

摘要

A new method for the preparation of Ru quasi single crystal electrode surfaces is described. Using the 'forced deposition' method followed by resistive heating in nitrogen, it is demonstrated that well-defined Ru films supported on Pt single crystal electrodes may be synthesised which, for the case of Pt{111} exhibit voltammetry similar to that reported for bulk single crystal Ru(0001) electrodes. Moreover, systematic changes in the voltammetric response of the well-ordered supported Ru film upon varying the substrate surface crystallography from Pt{111} to Pt{100} (via a series of Pt n{111} x {100} and Pt n{100} x {111} stepped surfaces) demonstrate unequivocally the epitaxial nature of the films. For surfaces based on Pt{100} x (1 x 1) terraces, two sharp, intense peaks just positive of the potential of hydrogen evolution signify the presence of fcc Ru{100} terrace sites. This is significant because fcc {100} surface sites are not normally associated with hcp bulk phases. In addition, the voltammetric features usually ascribed to fee {100} x {111} step sites and {111} terraces are clearly identified for the Ru films. The surfaces prepared by this method have been characterised by cyclic voltammetry (CV) in H2SO4. The most interesting facet of this new method is the ease of preparation of fee Ru{hkl} surfaces relative to analogues derived from variously prepared single crystals of Ru. (c) 2006 Elsevier B.V. All rights reserved.
机译:描述了一种制备RU准单晶电极表面的新方法。使用“强制沉积”方法,然后在氮气中进行电阻加热,证明可以合成支撑在PT单晶电极上的良好定义的Ru膜,其对于PT {111}的情况类似于散装的伏安法单晶Ru(0001)电极。此外,在从pt {111}到pt {100}(通过一系列pt n {111}×{100}和pt n×阶梯式表面逐步展示了薄膜的外延性。对于基于Pt {100} x(1 x 1)露台的表面,两个尖锐,强烈的峰值只是氢化潜力的阳性,表示FCC ru {100}露台网站的存在。这是显着的,因为FCC {100}表面位点通常与HCP批量相连。此外,用于RU电影,明确识别通常归因于收费的伏安特征{100} x {111}阶梯站点和{111}梯田。通过该方法制备的表面的特征在于H 2 SO 4中的循环伏安法(CV)。这种新方法的最有趣的方面是易于准备费Ru {HKL}相对于来自ru的各种制备的单晶的类似物的类似物。 (c)2006 Elsevier B.v.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号