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首页> 外文期刊>Electronics and Electrical Engineering >A Multibackground March Test for Static Neighborhood Pattern-Sensitive Faults in Random-Access Memories
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A Multibackground March Test for Static Neighborhood Pattern-Sensitive Faults in Random-Access Memories

机译:随机访问记忆中的静态邻域模式敏感故障的多袋阵列试验

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摘要

Rapid increase of density in the integrated circuits has an immediate effect upon memory testing. On one hand, the capacity of random-access memories chips enhances, thus increasing the test time and cost; on the other hand, the density of memory circuits grows, therefore more failure modes and faults need to be taken into account in order to obtain a good quality product. Accordingly, there are two conflicting constraints that need to be dealt with when considering a test algorithm: reducing the number of memory operations in order to permit large capacity memories to be tested in an appropriate period of time and covering a larger variety of memory faults [1, 2].
机译:集成电路密度的快速增加立即对存储器测试产生影响。 一方面,随机接入存储器芯片的容量增强,从而提高了测试时间和成本; 另一方面,存储器电路的密度增长,因此需要考虑更多的故障模式和故障,以便获得优质的产品。 因此,在考虑测试算法时需要处理两个冲突的约束:减少存储器操作的数量,以便在适当的时间段和覆盖各种各样的存储器故障中允许在适当的时间内测试大容量存储器并覆盖更大种类的存储器故障[ 1,2]。

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