ENSURING ADVANCED SEMICONDUCTOR DEVICE RELIABILITY USING FA AND SUBMICRON DEFECT DETECTION

摘要

Recent industry trends are placing increased requirements on the need to fully understand the thermal behavior of today's advanced semiconductor devices to ensure long-term reliability. Due to the critical nature of applications such as 5G, automotive electronics, artificial intelligence (AI), cloud storage, and military electronic systems, they all demand higher performance while simultaneously placing increased requirements on longterm reliability. Device developments that achieve higher power levels and faster switching speeds with increased functionality are driving device features to submicron levels and increasing complexity. The resulting power densities and potential for higher operating temperatures, localized hot spots, and unanticipated time-dependent thermal anomalies are compounding the challenges of ensuring adequate reliability.