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Experimental Progress towards Probing the Ground State of an lectron-Hole Bilayer by Low-Temperature Transport

机译:低温传输探测电子-空穴双层基态的实验进展

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Recently, it has been possible to design independently contacted electron-hole bilayers (EHBLs) with carrier densities < 5x 10~(10) cm~2 in each layer and a separation of 10-20 nm in a GaAs/AIGaAs system. In these EHBLs, the interlayer interaction can be stronger than the intralayer interactions. Theoretical works have indicated the possibility of a very rich phase diagram in EHBLs consisting of excitonic superfluid phases, charge density waves, and Wigner crystals. Experiments have revealed that the Coulomb drag on the hole layer shows strong nonmonotonic deviations from a ~T~2 behaviour expected for Fermi-liquids at low temperatures. Simultaneously, an unexpected insulating behaviour in the single-layer resistances (at a highly "metallic" regime with k_Fl > 500) also appears in both layers despite electron mobilities of above ~ 10~6cm~2V~(-1) s~(-1) and hole mobilities over ~ 10~5cm~2V~(-1) Experimental data also indicates that the point of equal densities (n = p) is not special.
机译:最近,有可能设计出独立接触的电子空穴双层(EHBL),每层的载流子密度<5x 10〜(10)cm〜2,在GaAs / AIGaAs系统中的间距为10-20 nm。在这些EHBL中,层间相互作用可能比层内相互作用更强。理论工作表明,在EHBL中,由激子超流体相,电荷密度波和Wigner晶体组成的相图非常丰富的可能性。实验表明,孔层上的库仑阻力表现出与费米液体在低温下预期的〜T〜2行为强烈的非单调偏差。同时,尽管电子迁移率超过〜10〜6cm〜2V〜(-1)s〜(-),单层电阻(在k_Fl> 500的高度“金属”状态下)也出现了意外的绝缘行为。 1)和迁移率在〜10〜5cm〜2V〜(-1)以上的实验数据还表明等密度点(n = p)并不特殊。

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