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首页> 外文期刊>Advanced Science Letters >Performance Optimization of Optical Y-Junction on Silicon-on-Insulator for Mach-Zehnder Interferometer Applications
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Performance Optimization of Optical Y-Junction on Silicon-on-Insulator for Mach-Zehnder Interferometer Applications

机译:Mach-Zehnder干涉仪应用中绝缘硅上光学Y结的性能优化

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摘要

The performance optimization of Y-junction on Silicon-on-Insulator using Taguchi Method is presented. Several factors affecting the V-junction structure such as the offset in the X direction (lx), offset in Z direction (lz), waveguide rib width and waveguide rib height have been studied for optimization purposes. The simulation has been done utilizing the OptiBPM software for device design and optical light propagation through the device in 3D at wavelength 1.55 μm. The four control factors were varied for 3 levels to perform 9 experiments using Taguchi method. Meanwhile, two noise factors chosen were varied for 2 levels to get readings of the output power from each arm for every row of experiment. The output power was optimized using signal-to-noise ratio (SNR) of 'larger-the-better.' It is concluded that the offset in the X direction (lx), was identified as having the major influence on the Y-junction performance by a percentage of 44%. The excess loss of the optimal design is reduced by 15% to 0.205 dB. Hence, the optimized design is suitable to be used for the development of Mach-Zehnder Interferometer (MZI).
机译:提出了使用Taguchi方法优化绝缘子上Y型结的性能。为了优化目的,已经研究了影响V形结结构的几个因素,例如X方向上的偏移(lx),Z方向上的偏移(lz),波导肋宽度和波导肋高度。利用OptiBPM软件对设备进行设计,并在波长为1.55μm的3D中以光学方式传播光通过设备进行仿真。使用田口方法将四个控制因子的3个水平进行变化,以执行9个实验。同时,为两个级别选择了两个噪声因子,以获取每一行实验的每个臂的输出功率读数。使用“更好”的信噪比(SNR)对输出功率进行了优化。结论是,确定在X方向(lx)上的偏移对Y结性能的影响最大为44%。最佳设计的额外损耗降低了15%,为0.205 dB。因此,优化的设计适合用于马赫曾德尔干涉仪(MZI)的开发。

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