A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs

摘要

The electrical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) deteriorate with the scaling of device dimensions. To further the miniaturisation and to have more control over the channel, one of the promising solutions is the multi-gate (MG) architecture of MOSFET. In the present work we have investigated various MG devices like double-gate (DG), tri-gate (TG) and gate-all-around (GAA) MOSFETs by varying their physical parameters and have compared the associated short-channel effects (SCEs). For a specific SCE, a common mathematical expression has been used for all the MOSFET architectures. The analytical results have been found to be in reasonable agreement with the simulated/fabricated devices.