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首页> 外文期刊>International Journal of Refractory Metals & Hard Materials >Spark plasma sintering of pure TiCN: Densification mechanism, grain growth and mechanical properties
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Spark plasma sintering of pure TiCN: Densification mechanism, grain growth and mechanical properties

机译:纯TICN的火花血浆烧结:致密化机理,晶粒生长和机械性能

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AbstractThis study aims to disclose the densification mechanism and grain growth behaviors during the spark plasma sintering (SPS) of undoped TiCN powder. The SPS experiments were performed under temperatures ranging from 1600°C to 2200°C and a fixed pressure of 50MPa. The sintering mechanisms were described in different models according to two grain growth behaviors: densification without grain growth at low temperatures (1600–1700°C) and grain growth without apparent densification at higher temperatures (1800–2200°C). At the constant grain stage, a creep model is applied to describe the densification process. In addition, the effective stress exponents,n, are calculated, indicating that the densification can be attributed to both grain boundary sliding (n=1.5) and dislocation climbing (n=3.13 orn=4.29). During the second stage of sintering, the grain growth model reveals that the grain-growth is controlled by grain boundary diffusion. In addition, the Vickers hardness varies from 4326 Hv to 6762 Hv when the density ranges from 90% to 96.3%.Highlights?Densification mechanism and grain-growth of pure TiCN were developed through Spark plasma sintering for the first time.?By analyzing the sintering process, two parts were included: densification stage and grain growth stage.?A creep model is cited to formulate hypothesis concerning densification micromechanism.?Two micro-mechanism of grain boundary sliding and dislocation climbing were proposed.?A grain growth model is cited and we proposed grain growth was controlled by grain boundary diffusion.]]>
机译:<![cdata [ 抽象 本研究旨在在火花等离子体烧结期间披露致密化机制和谷物生长行为(SPS)未掺杂的TICN粉末。 SPS实验在1600℃至2200℃的温度下进行,固定压力为50MPa。根据两个晶粒生长行为的不同模型中描述了烧结机制:致密化而不在低温下(1600-1700℃)和晶粒生长,在较高温度下(1800-2200℃)而无明显致密化。在恒定晶粒阶段,应用蠕变模型来描述致密化过程。此外,计算有效的应力指数 n ,表明致密化可以归因于晶界滑动( n = 1.5)和错位攀爬( n = 3.13或 n = 4.29)。在烧结的第二阶段,晶粒生长模型表明,晶粒生长由晶界扩散控制。此外,当密度范围为90%至96.3%时,维氏硬度从4326 HV到6762 HV变化。 突出显示 通过首次通过火花血浆烧结开发纯TICN的致密化机制和谷物生长。 通过分析烧结过程,两个部分包括:致密化阶段和谷物生长阶段。 蠕动被引用模型制定关于致密化微机制的假设。 提出了两个晶界滑动和脱位攀爬的微机制。 引用谷物生长模型,我们提出的谷物生长由晶界扩散控制。 ]]>

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