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Planar Field Emission Current from Individual Carbon Nanotubes

机译:单个碳纳米管的平面场发射电流

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摘要

Carbon nanotube (CNT) planar field emitters were fabricated on a SiO_2/Si substrate. The anode, cathode and CNT all lay on the same substrate for the promising advantage of intergratibility with planar technology. The emission current was acquired in a scanning electron microscope (SEM). Despite the asymmetry (tip-electrode) of our field emission sample, a symmetrical l-V curve consistent with the Fowler-Nordheim theory was acquired. Using Zener theory on quantum tunneling in insulators, the observed phenomenon was explained to be a possible leakage current through the insulating SiO_2 instead of real field emission. Moreover, the simulated local electric fields at the emitter apex exclude the possibility of an accountable emission current. Our results are of great importance in studying planar field emission since it draws attention to avoid mistaking leakage current for the actual field emission current in planar field emission devices.
机译:在SiO_2 / Si衬底上制备了碳纳米管(CNT)平面场致发射体。阳极,阴极和CNT均位于同一基板上,具有可与平面技术互穿的前景。在扫描电子显微镜(SEM)中获得发射电流。尽管我们的场发射样品不对称(尖端电极),但仍获得了与Fowler-Nordheim理论一致的对称L-V曲线。使用有关绝缘体中量子隧穿的齐纳理论,观察到的现象被解释为可能是通过绝缘SiO_2的泄漏电流,而不是实际的场发射。此外,在发射极顶点处模拟的局部电场排除了产生可疑发射电流的可能性。我们的结果对研究平面场发射非常重要,因为它引起人们的注意,以避免将泄漏电流误认为平面场发射器件中的实际场发射电流。

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