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Intergranular fracture prediction and microstructure design

机译:晶间骨折预测和微观结构设计

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摘要

A model based on discrete unit events coupled with a graph search algorithm is developed to predict intergranular fracture. The model is based on two hypotheses: (i) the key unit event associated with intergranular crack propagation is the interaction of a grain boundary crack with a grain boundary segment located at an angle with the initial crack plane; and (ii) for a given crack path, the overall crack growth resistance can be calculated using the crack growth resistance of a collection of unit events. Next, using a directed graph containing the connectivity of grain boundary junctions and the distances between them, and crack deflection versus crack growth resistance data, a directed graph in the J-resistance space is created. This graph contains information on the crack growth resistance for all possible crack paths in a given grain microstructure. Various crack growth resistance curves are then calculated including those corresponding to: (i) a local resistance minimum; (ii) a global minimum; and (iii) for verification, a path specified by microstructure-based finite element calculations. The results show that the proposed method based on discrete unit events and graph search can predict the crack path and the crack growth resistance for cracks that propagate from one grain boundary junction to another. The proposed computationally inexpensive model can be used to design material microstructures with improved intergranular fracture resistance, and/or to assess the overall crack growth resistance of materials with a known distribution of grain morphology.
机译:开发了一种基于与图形搜索算法耦合的离散单元事件的模型以预测晶间骨折。该模型基于两个假设:(i)与晶间裂纹传播相关的关键单元事件是晶界裂纹与位于与初始裂缝平面的角度的晶界段的相互作用; (ii)对于给定的裂纹路径,可以使用单元事件集合的裂纹生长抗性来计算整体裂纹生长阻力。接下来,使用包含晶粒边界结和它们之间的距离连接的定向图,以及裂纹偏转与裂缝生长阻力数据,创建了J型电阻空间中的指导图。该图包含关于给定晶粒微观结构中所有可能的裂纹路径的裂纹生长阻力的信息。然后计算各种裂缝生长抗性曲线,包括对应于:(i)局部电阻最小的曲线; (ii)全球最低限度; (iii)用于验证,由基于微结构的有限元计算指定的路径。结果表明,基于离散单元事件和曲线图搜索的该方法可以预测从一个晶界交叉到另一个晶界交叉传播的裂缝的裂纹路径和裂纹生长阻力。所提出的计算廉价模型可用于设计具有改进的晶间裂缝抗性的材料微结构,和/或评估材料的整体裂纹生长抗性,具有已知的晶粒形态分布。

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