Investigating the Properties of ZnO-Al_2O_3-Y_2O_3 Transparent Conductive Metal Oxide Thin Films Prepared by E-Beam Physical Vapor Deposition

摘要

A ZnO-Al_2O_3-Y_2O_3 (AZYO) ternary compound was sintered at 1100℃ as a target and deposited on glass using an electron beam evaporation system. The effects of substrate temperature (25～110℃) and deposition (oxygen) pressure (1 × 10~(-3) Torr and 1 × 10~(-4) Torr) on deposition rate, morphology, roughness, resistivity, and optical transmission spectrum were studied. The deposition rate increased as the oxygen pressure increases from 1 × 10~(-4) Torr to 1 × 10~3 Torr and the deposition rate linearly decreased with increasing deposition temperature. From the XRD patterns, all the AZYO thin films still exhibited the (002) peak at around 20 = 34.40°. The Burstein-Moss shift was observed and used to prove that defects in the AZYO thin films decreased with increasing substrate temperature. The value variations in the band gap energy (E_g) of the AZYO thin films were evaluated from plots of (αhv)~(1/2) versus energy. The measured E_g values increased with increasing substrate temperature and slightly increased with increasing oxygen pressure.