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Erasing Performance of Phase-Change Materials for Scanning Probe Applications

机译:用于扫描探针应用的相变材料的擦除性能

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The erasable performance of a scanning probe phase-change memory from the amorphous to the crystalline phase or vice versa is investigated here in light of a previously developed 2D comprehensive model. The simulation results demonstrate the feasibility of erasing amorphous bits from a crystalline background using the scanning probe phase-change memory under low power consumption. Erasing crystalline bits from an amorphous background is found to be problematic due to the presence of the unwanted transformation of the crystalline 'ring'. Such a drawback can be however effectively overcome using either 'patterned' media or slow crystal growth material, according to a newly developed nucleation-growth model.
机译:根据先前开发的2D综合模型,这里研究了扫描探针相变存储器从非晶相到结晶相的可擦除性能,反之亦然。仿真结果证明了在低功耗下使用扫描探针相变存储器从晶体背景中擦除非晶位的可行性。由于存在晶体“环”的不希望有的转变,从非晶态背景中擦除晶体位被发现是有问题的。但是,根据新开发的成核生长模型,可以使用“图案化”介质或慢速晶体生长材料有效克服这种缺陷。

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