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Difference in physical properties of MAX-phase compounds Cr2GaC and Cr2GaN induced by an anomalous structure change in Cr2GaN

机译:MAX相化合物CR2GAC和CR2GAN的物理性质差异通过CR2GAN的异常结构变化诱导

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摘要

MAX-phase compounds with layered structure have been investigated extensively due to their excellent metallic and ceramic properties. Among them, Cr2GaC and Cr2GaN possess the same crystal structure and similar electronic structure, whereas Cr2GaN undergoes a spin-density-wave transition around 170 K but Cr2GaC is Pauli paramagnetism without any magnetic transition. To understand what make these happen, we studied the crystal structure between 300 and 35 K for both Cr2GaC and Cr2GaN. As the temperature decreases, the lattice constants (both a and c) decline monotonically in Cr2GaC, while an abnormal negative thermal expansion of c axis was observed below 170 K in Cr2GaN. The increase of c/a induced by abnormal increase of c leads to the enhancement of localization of Cr2N plane and causes more Cr-3d electrons confinement in Cr2N plane of Cr2GaN. This further facilitates the reconstruction of density of states near the Fermi surface and even forms the Fermi surface nesting, resulting in the spin-density-wave transition as well as the abrupt changes of resistivity, specific heat, and density of carriers around 170 K in Cr2GaN.
机译:由于其优异的金属和陶瓷特性,已经过度研究具有层状结构的最大相化合物。其中,CR2GAC和CR2GAN具有相同的晶体结构和类似的电子结构,而CR2GAN经历旋转密度波过渡,约170k,但CR2GAC是保利副名例,没有任何磁性转变。要了解什么使得这些发生,我们研究了CR2GAC和CR2GAN的300和35 k之间的晶体结构。随着温度降低,晶格常数(A和C)在CR2GAC中单调下调,而C轴的异常负热膨胀在CR2GAN中的170 k下方观察到。 C / A异常增加的C / A的增加导致CR2N平面的定位增强,并在CR2GAN的CR2N平面中引起更多的CR-3D电子约束。这进一步促进了Fermi表面附近的状态密度的重建,甚至形成Fermi表面嵌套,导致旋转密度波过渡以及电阻率,比热量和载体密度约170k的突然变化CR2gan。

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