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首页> 外文期刊>Integrated Ferroelectrics >Characterization of BLT Films Formed by Using a Flash-Annealing Process on Pt/(Cr, Ti)N/TiN/Ti Bottom Electrode
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Characterization of BLT Films Formed by Using a Flash-Annealing Process on Pt/(Cr, Ti)N/TiN/Ti Bottom Electrode

机译:通过在Pt /(Cr,Ti)N / TIN / TI底部电极上使用闪退退火工艺形成的BLT膜的表征

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摘要

Ferroelectric Bi_(4-x)La_xTi_3O_(12) (BLT) films were prepared by using a sol-gel method on Pt/(Cr, Ti)N/TiN/Ti bottom electrode. The BLT films crystallized by a flash-annealing (750 deg C, 30 sec, O_2) were found to show excellent shapes of hysteresis loop in the P-E (polarization vs. field) characteristics. It was also found that the recovery-annealing (600 deg C, 60 min, O_2) after the flash-annealing was exceedingly effective to decrease the leakage current of the films and to keep the ferroelectric property good.
机译:通过在Pt /(Cr,Ti)N / TiN / Ti底部电极上使用溶胶 - 凝胶法制备铁电Bi_(4-X)La_Xti_3O_(12)(BLT)膜。 发现通过闪蒸退火(750℃,30秒,O_2)结晶的BLT膜在P-E(偏振与场)特征中显示出优异的滞后环。 还发现,在闪蒸退火后的回收退火(600℃,60分钟,O_2)非常有效地降低薄膜的漏电流并保持铁电性质。

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