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机译:通过脉冲激光沉积生长的镍薄膜中的非化学计量诱导的金属对绝缘体过渡
Gwangju Inst Sci &
Technol Sch Mat Sci &
Engn Gwangju 61005 South Korea;
Korea Basic Sci Inst Adv Nano Surface Res Grp Daejeon 34133 South Korea;
Inha Univ Dept Phys Incheon 22212 South Korea;
Gwangju Inst Sci &
Technol Sch Mat Sci &
Engn Gwangju 61005 South Korea;
Gachon Univ Dept Elect Engn Seongnam 13120 South Korea;
Gwangju Inst Sci &
Technol Sch Mat Sci &
Engn Gwangju 61005 South Korea;
Gachon Univ Dept Elect Engn Seongnam 13120 South Korea;
Gwangju Inst Sci &
Technol Sch Mat Sci &
Engn Gwangju 61005 South Korea;
Inha Univ Dept Phys Incheon 22212 South Korea;
Korea Basic Sci Inst Adv Nano Surface Res Grp Daejeon 34133 South Korea;
Univ Ulsan Dept Phys Ulsan 44610 South Korea;
Gwangju Inst Sci &
Technol Sch Mat Sci &
Engn Gwangju 61005 South Korea;
Metal-to-insulator transition; Thin film; Nickelate; Pulsed laser deposition;
机译:通过脉冲激光沉积生长的镍薄膜中的非化学计量诱导的金属对绝缘体过渡
机译:通过脉冲激光沉积生长的镍酸盐薄膜中的重现性和化学计量问题
机译:由反应性脉冲激光沉积生长的硼掺杂VO2薄膜的金属绝缘体过渡温度
机译:脉冲激光沉积生长在涂Mo的钠钙玻璃基板上生长的Cu2ZnSnSe4薄膜的沉积时间的影响
机译:研究NbNx薄膜和通过脉冲激光沉积和热扩散生长的纳米粒子。
机译:衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
机译:通过脉冲激光沉积生长外延稀土镍膜的金属对绝缘体转变的陶瓷 - 靶结晶