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机译:取决于铁电Si:HFO2薄膜中的唤醒效果的负电容现象
Hanyang Univ Dept Appl Phys Ansan 15588 Gyeonggi Do South Korea;
Hanyang Univ Dept Appl Phys Ansan 15588 Gyeonggi Do South Korea;
Hanyang Univ Dept Appl Phys Ansan 15588 Gyeonggi Do South Korea;
Hanyang Univ Dept Appl Phys Ansan 15588 Gyeonggi Do South Korea;
Korea Polytech Univ Dept Nanoopt Engn Shihung 15073 Gyeonggi Do South Korea;
Korea Polytech Univ Dept Nanoopt Engn Shihung 15073 Gyeonggi Do South Korea;
Korea Polytech Univ Dept Nanoopt Engn Shihung 15073 Gyeonggi Do South Korea;
Hanyang Univ Dept Appl Phys Ansan 15588 Gyeonggi Do South Korea;
Negative capacitance; Si doped HfO2; Wake-up effect;
机译:取决于铁电Si:HFO2薄膜中的唤醒效果的负电容现象
机译:探讨热力学系数对Zr掺杂HFO2铁电电容器瞬态负电容的影响
机译:具有TiN和Ir电极的Si掺杂HfO2薄膜中的铁电现象
机译:具有铁电HfO2的双栅极负电容FET在栅堆叠上的可扩展性,可实现低于0.2V的节能运行
机译:铁电负电容的设计与表征
机译:外延Y掺杂HfO2薄膜中明显铁电的论证
机译:利用铁电HfO2薄膜在低于0.2V电源电压下工作的陡坡负电容场效应晶体管器件设计