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首页> 外文期刊>Current applied physics: the official journal of the Korean Physical Society >Sr 2FeMoO 6 nanosized compound with dielectric sheaths for magnetically sensitive spintronic devices
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Sr 2FeMoO 6 nanosized compound with dielectric sheaths for magnetically sensitive spintronic devices

机译:SR 2 FEMOO 6 纳米化化合物,具有用于磁敏敏感的旋转式旋转型器件的介电护套

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摘要

AbstractSingle-phase agglomerated Sr2FeMoO6-δpowders with the iron and molybdenum cations superstructural ordering of 88% were synthesized by sol-gel technique from the Sr(NO3)2and Fe(NO3)3·9H2O solutions with pH?=?4. The ultrasound dispersion enabled us to obtain 75?nm grains. Powders were pressed with 4?GPa to receive the ceramics. The additional annealing at 700?K promoted the appearance of 7.5% SrMoO4phase. The nanocomposite with dielectric sheaths around the grains was obtained. Magnetization temperature dependences in zero-field cooled mode revealed inhomogeneous magnetic states. At temperature below 19?K, the superparamagnetic state is observed. Temperature increase leads to a realization of the stable superparamagnetic and metastable ferrimagnetic states, blocked by magnetic anisotropy energy. The resistivity temperature dependences have the semiconducting conductivity type. The charge transfer due to the hopping conductivity on the localized states in the energy band near the Fermi level dominates at 260–300?K. At 130–200?K the charge transfer is realized by electrons tunneling through the energy barrier. The electrons inelastic tunneling on conducting channels between grains, through the localized states in the dielectic interlayer dominates at low temperatures. The resistivity decreases in magnetic fields and the negative tunneling magnetoresistive effect reaching 41% occurs.
机译:<![CDATA [ 抽象 单相块凝聚sr 2 femo 6 - Δ粉末和钼阳离子的粉末通过来自SR的溶胶 - 凝胶技术(NO 3 2 和FE(NO 3 3 ·9H 2 o ph?=?4。超声波分散使我们能够获得75纳米谷物。用4°GPA压制粉末以接收陶瓷。 700 k的额外退火促进了7.5%srmoo 4 阶段的外观。获得谷物周围的介电护套的纳米复合材料。零场冷却模式下的磁化温度依赖性显示出非均匀磁力状态。在低于19?K的温度下,观察到超顺磁状态。温度升高导致实现稳定的超顺磁性和稳定的铁磁性状态,被磁各向异性能量堵塞。电阻率温度依赖性具有半导体导电类型。由于在费米水平附近的能源带中的局部状态上的跳跃电导率导致的电荷转移在260-300?k下占主导地位。在130-200?K时,通过能量屏障通过电子隧穿实现电荷转移。在谷物之间导电通道的电子无弹性隧穿,通过在低温下通过局部态占主导地位。磁场的电阻率降低,达到41%的负隧道磁阻效应发生。

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