Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode

摘要

The resistive switching characteristics of sputtered deposited molybdenum disulphide (MoS2) thin film has been investigated in Cu/MoS2/W2N stack configuration for Resistive Random Access Memory (ReRAM) application. The benefits of incorporating tungsten nitride (W2N) as a bottom electrode material were demonstrate by stability in operating voltages, good endurance (10(3) cycles) and long non-volatile retention (10(3) s) characteristics. Resistive switching properties in Cu/MoS2/W2N structure are induced by the formation/disruption of Cu conducting filaments in MoS2 thin film. Ohmic law and space charge limited current (SCLC) are observed as dominant conduction mechanism in low resistance state (LRS) and high resistance state (HRS) respectively. This study suggests the application of MoS2 thin films with W2N bottom electrode for next generation non-volatile ReRAM application.