Simulation study of hetero dielectric tri material gate tunnel FET based common source amplifier circuit

摘要

Tunneling Field Effect Transistor (TFET) has emerged as an alternative device to MOSFET for designing low power analog and digital integrated circuits. This paper investigates the performance of a common source amplifier circuit designed using Gate-All-Around Hetero Dielectric Tri Material Gate TFET device. HD-TMGTFET device is designed on Visual TCAD tool and a look up table-based Verilog A model has been designed to perform SPICE circuit simulations. The performance of the HD-TMGTFET based CS amplifier circuit is compared with the MOSFET based amplifier designed using 65 nm MOSFET device. Device simulation results show that HD-TMGTFET device exhibits steep subthreshold slope of 21.2 mV/decade, high ON current of 7.5 x 10(-6) A/mu m and extremely low OFF state current of the order of 10(-19) A/mu m. The device also exhibits extremely low values of miller capacitances and has maximum unity gain frequency of 124 GHz at gate voltage of 0.9 V. HD-TMGTFET device based amplifier can provide amplification of up to 3 times within the frequency range of 100 KHz to 0.1 GHz and on the other hand MOSFET based amplifier circuit provides amplification up to 1.58 times over limited frequency range of 1 MHz, clearly showing the potential of using HD-TMGTFET device in high frequency applications. (C) 2018 Elsevier GmbH. All rights reserved.