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机译:氮氧比对DC磁控溅射制备的N掺杂TiO2薄膜的N原子位置的影响
Chengdu Univ Informat Technol Coll Optoelect Technol Chengdu 610225 Sichuan Peoples R China;
Chengdu Univ Informat Technol Coll Optoelect Technol Chengdu 610225 Sichuan Peoples R China;
Chengdu Univ Informat Technol Coll Optoelect Technol Chengdu 610225 Sichuan Peoples R China;
Chengdu Univ Informat Technol Coll Optoelect Technol Chengdu 610225 Sichuan Peoples R China;
Chengdu Univ Informat Technol Coll Optoelect Technol Chengdu 610225 Sichuan Peoples R China;
Chengdu Univ Informat Technol Coll Optoelect Technol Chengdu 610225 Sichuan Peoples R China;
Chengdu Univ Informat Technol Coll Optoelect Technol Chengdu 610225 Sichuan Peoples R China;
Sun Yat Sen Univ Sch Elect &
Commun Engn Guangzhou 510275 Guangdong Peoples R China;
Chengdu Univ Informat Technol Coll Resources &
Environm Chengdu 610225 Sichuan Peoples R China;
机译:氮氧比对DC磁控溅射制备的N掺杂TiO2薄膜的N原子位置的影响
机译:双直流磁控溅射技术制备渐变TiO2和TiO2 / ITO薄膜的特性
机译:DC反应磁控溅射在低压下制备TiO2薄膜的结构特性
机译:氩气/氧气流量比对直流磁控溅射制备TiO2薄膜光催化效率的影响。
机译:脉冲反应直流磁控溅射技术制备的高介电常数薄膜的沉积和表征。
机译:直流磁控溅射沉积TiO2薄膜的生物相容性和表面性质
机译:射频磁控溅射制备金红石型N掺杂TiO2薄膜的表征