机译:氘含量对DKDP晶体光学性质的影响
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
Research Center of Laser FusionChina Academy of Engineering PhysicsMianyang 621900 China;
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100 China;
Administration CenterShandong Academy of Information and Communication TechnologyJinan 250101 China;
A1. 3ω conversion efficiency; A1. non‐uniformities of refractive indices; A1. the 3ω laser damage threshold (3ω LDT); A1. weak absorption; B1. DKDP crystal;
机译:氘含量对DKDP晶体光学性质的影响
机译:在355nm处70%氘代DKDP晶体的非线性光学性能的影响
机译:快速生长的KDP和DKDP晶体的光学性质研究
机译:不同氘含量的DKDP晶体的性能研究
机译:第一部分:单晶中G阳离子的电子顺磁共振研究。第二部分:在77 K时,氘同位素对单晶体中光学激发三重态分子零场裂变的EPR研究。
机译:通过石英晶体微稳定和氘氧化物交换测量的聚电解质多层膜的含水量
机译:离子偶氮共晶分子:液晶性质中酸含量和光致光学各向异性的影响