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首页> 外文期刊>Crystal Research and Technology: Journal of Experimental and Industrial Crystallography >Effects of Surface Tension Driven Convection Upon Crystal Growth of KTa 1‐x1‐x Nb xx O 33
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Effects of Surface Tension Driven Convection Upon Crystal Growth of KTa 1‐x1‐x Nb xx O 33

机译:基于KTA 1-X / sub> 1-x Nb x x×x o 3 3 3 3 3的晶体生长对对流对流的影响

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Abstract > The surface tension driven convection, together with the rotating crystal growth process of potassium tantalate niobate (KTa <sub>1‐x</sub> Nb <sub>x</sub> O <sub>3</sub> , KTN) crystals from unstirred melt has been carried out in a high temperature in‐situ observation system. The streamline of the stable convection is found to be in the form of a double loop axially symmetric vortices, which causes the rotation during KTN crystals growth process. The effect of surface tension convection on interfacial heat, mass and momentum transfer are investigated experimentally. The dimensionless parameters of the three transports are calculated. For KTN crystals, velocity and temperature boundary layers are pointless. Solute transfer is the main form of interface transport during crystal growth process. The effect of Nb content x on boundary layer thickness is discussed. There is a critical Marangoni Number <mat:math display="inline" altimg="urn:x-wiley:02321300:media:crat201700161:crat201700161-math-0001" wiley:location="equation/crat201700161-math-0001.png"> <mat:mrow> <mat:mi>M</mat:mi> <mat:msub> <mat:mi>a</mat:mi> <mat:mi>c</mat:mi> </mat:msub> <mat:mo>~</mat:mo> <mat:mn>60</mat:mn> </mat:mrow> </mat:math> . When <mat:math display="inline" altimg="urn:x-wiley:02321300:media:crat201700161:crat201700161-math-0002" wiley:location="equation/crat201700161-math-0002.png"> <mat:mrow> <mat:mi>M</mat:mi> <mat:mi>a</mat:mi> <mat:mo></mat:mo> <mat:mi>M</mat:mi> <mat:msub> <mat:mi>a</mat:mi> <mat:mi>c</mat:mi> </mat:msub> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> <div class="translation abstracttxt"> <span class="zhankaihshouqi fivelineshidden" id="abstract"> <span>机译:</span><Abstract Type =“Main”XML:Lang =“en”> <标题类型=“main”>抽象</标题> >表面张力驱动的对流,与钽酸盐铌酸钾的旋转晶体生长过程一起(KTA在高温原位观察系统中,来自未经升降熔体的来自未经升温熔体的亚> 1-x </ sub> Nb <sub> x </ sub>,Ktn)晶体。发现稳定对流的流线是双环轴对称涡流的形式,这导致KTN晶体生长过程中的旋转。实验研究了表面张力对流对界面热,质量和动量转移的影响。计算三种传输的无量纲参数。对于KTN晶体,速度和温度边界层是无意义的。溶质转移是晶体生长过程中界面传输的主要形式。讨论了Nb含量 x </ i>对边界层厚度的影响。有一个关键的Marangoni号<mat:数学显示=“内联”Altimg =“URN:X-Wiley:02321300:Media:Crat201700161:Crat201700161-Math-0001”Wiley:Location =“等式/ Crat201700161-Math-0001.png “> <may:mrow> <mat:mi> m </ mat:mi> <mat:msub> <mat:mi> a </ mat:mi> <mat:mi> c </ mat:mi> </ MAT:MSUB> <MAT:MO>〜</ MAT:MO> <MAT:MN> 60 </ MAT:Mn> </ MAT:MROW> </ MAT:MATH>。当<mat:数学显示=“内联”Altimg =“URN:X-Wiley:02321300:CRAT201700161:CRAT201700161-Math-0002”Wiley:Location =“等式/ Crat201700161-Math-0002.png”> <mat: MROW> <MAT:MI> M </ MAT:MI> <MAT:MI> A </ MAT:MI> <MAT:MO>&GT; </ MAT:MO> <MAT:MI> M </ MAT:MI > <mat:msub> <mat:mi> a </ mat:mi> <mat:mi> c </ mat:mi> </ mat:msub> </span> <span class="z_kbtn z_kbtnclass hoverxs" style="display: none;">展开▼</span> </div> </div> <div class="record"> <h2 class="all_title" id="enpatent33" > 著录项</h2> <ul> <li> <span class="lefttit">来源</span> <div style="width: 86%;vertical-align: text-top;display: inline-block;"> <a href='/journal-foreign-18164/'>《Crystal Research and Technology: Journal of Experimental and Industrial Crystallography 》</a> <b style="margin: 0 2px;">|</b><span>2017年第11期</span><b style="margin: 0 2px;">|</b> <span>共6页</span> </div> </li> <li> <div class="author"> <span class="lefttit">作者</span> <p id="fAuthorthree" class="threelineshidden zhankaihshouqi"> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Li Shuhui&option=202" target="_blank" rel="nofollow">Li Shuhui;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Pan Xiuhong&option=202" target="_blank" rel="nofollow">Pan Xiuhong;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Liu Yan&option=202" target="_blank" rel="nofollow">Liu Yan;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Jin Weiqing&option=202" target="_blank" rel="nofollow">Jin Weiqing;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Zhang Minghui&option=202" target="_blank" rel="nofollow">Zhang Minghui;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Gai Lijun&option=202" target="_blank" rel="nofollow">Gai Lijun;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Lei Lei&option=202" target="_blank" rel="nofollow">Lei Lei;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Deng Weijie&option=202" target="_blank" rel="nofollow">Deng Weijie;</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=Chen Kun&option=202" target="_blank" rel="nofollow">Chen Kun;</a> </p> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zkzz" style="display: none;">展开▼</span> </div> </li> <li> <div style="display: flex;"> <span class="lefttit">作者单位</span> <div style="position: relative;margin-left: 3px;max-width: 639px;"> <div class="threelineshidden zhankaihshouqi" id="fOrgthree"> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> <p>Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050 China;</p> </div> <span class="z_kbtnclass z_kbtnclassall hoverxs" id="zhdw" style="display: none;">展开▼</span> </div> </div> </li> <li> <span class="lefttit">收录信息</span> <span style="width: 86%;vertical-align: text-top;display: inline-block;"></span> </li> <li> <span class="lefttit">原文格式</span> <span>PDF</span> </li> <li> <span class="lefttit">正文语种</span> <span>eng</span> </li> <li> <span class="lefttit">中图分类</span> <span> <a href="https://www.zhangqiaokeyan.com/clc/160.html" title="晶体学">晶体学 ;</a></span> </li> <li class="antistop"> <span class="lefttit">关键词</span> <p style="width: 86%;vertical-align: text-top;"> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=boundary layer&option=203" rel="nofollow">boundary layer;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=in‐situ observation&option=203" rel="nofollow">in‐situ observation;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=potassium tantalate niobate&option=203" rel="nofollow">potassium tantalate niobate;</a> <a style="color: #3E7FEB;" href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=surface tension convection&option=203" rel="nofollow">surface tension convection;</a> </p> <div class="translation"> 机译:边界层;原位观察;钽酸钾;表面张力对流; 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class="tuijian_authcolor"> . 人工晶体学报 </a> </span> <span> . 2010</span><span> ,第B06期</span> </span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/academic-journal-cn_detail_thesis/0201295956788.html">提拉法生长立方相KTa_(1-x)Nb_xO_3晶体</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王旭平&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 王旭平</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王继扬&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,王继扬</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=于永贵&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,于永贵</a> <span> <a href="/journal-cn-57225/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 稀有金属 </a> </span> <span> . 2006</span><span> ,第6期</span> </span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/academic-journal-cn_detail_thesis/0201295386790.html">KTa_(1-x)Nb_xO_3三组分复合热释电薄膜的制备与性能研究</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=吴会光&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 吴会光</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王世敏&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,王世敏</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=傅晶&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,傅晶</a> <span> <a href="/journal-cn-57285/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 硅酸盐学报 </a> </span> <span> . 2002</span><span> ,第4期</span> </span> </div> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/academic-journal-cn_detail_thesis/0201293779177.html">KTa_(1-x)Nb_xO_3薄膜的制备研究</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王世敏&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 王世敏</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=张艳&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,张艳</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=张刚升&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,张刚升</a> <span> <a href="/journal-cn-56917/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 压电与声光 </a> </span> <span> . 1997</span><span> ,第2期</span> </span> </div> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/academic-journal-cn_detail_thesis/0201295424656.html">KTa_(1-x)Nb_xO_3薄膜的性能研究进展</a> <b>[J]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=王世敏&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 王世敏</a> <span> <a href="/journal-cn-56917/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 压电与声光 </a> </span> <span> . 1996</span><span> ,第5期</span> </span> </div> </li> <li> <div> <b>6. </b><a class="enjiyixqcontent" href="/academic-conference-cn_meeting-11933_thesis/02022505010.html">A位离子的不同占位对K0.5(1-x)Na0.525Nb0.95Sb0.05O3(KNNS)系无铅压电陶瓷性能的影响</a> <b>[C]</b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=孙勇&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 孙勇</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=肖定全&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,肖定全</a> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=朱兆利&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor">,朱兆利</a> <span> <a href="/conference-cn-11933/" target="_blank" rel="nofollow" class="tuijian_authcolor"> . 第十三届全国电介质物理、材料与应用学术会议 </a> <span> <span> . 2010</span> </span> </div> </li> <li> <div> <b>7. </b><a class="enjiyixqcontent" href="/academic-degree-domestic_mphd_thesis/020311383988.html">旋转对Czochralski熔体晶体生长中热对流过程的影响</a> <b>[A] </b> <span> <a href="/search.html?doctypes=4_5_6_1-0_4-0_1_2_3_7_9&sertext=沈挺&option=202" target="_blank" rel="nofollow" class="tuijian_auth tuijian_authcolor"> . 沈挺</a> <span> . 2016</span> </span> </div> </li> </ul> <ul style="display: none;"> <li> <div> <b>1. </b><a class="enjiyixqcontent" href="/patent-detail/06120106296147.html">掺杂稀土钽铌酸盐RE′<Sub>x</Sub>RE<Sub>1-x</Sub>Nb<Sub>y</Sub>Ta<Sub>1-y</Sub>O<Sub>4</Sub>发光材料及其熔体法晶体生长方法</a> <b>[P]</b> . <span> 中国专利: CN102108551A </span> <span> . 2011-06-29</span> </div> </li> <li> <div> <b>2. </b><a class="enjiyixqcontent" href="/patent-detail/061203827728.html">基于残差摄动法的边界变化对流场影响差量的计算方法</a> <b>[P]</b> . <span> 中国专利: CN107256290B </span> <span> . 2020.07.10</span> </div> </li> <li> <div> <b>3. </b><a class="enjiyixqcontent" href="/patent-detail/06130426780427.html">Producing silicon carbide volume single crystal, by disposing seed crystal in crystal growth region of growth crucible with initial growth surface and center central longitudinal axis and producing growth gas phase in crystal growth region</a> <b>[P]</b> . <span> 外国专利: <!-- 德国专利: --> DE102009016132A1 </span> <span> . 2010-10-07</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译:通过将晶种置于具有初始生长表面和中心中心纵轴的生长坩埚的晶体生长区域中并在晶体生长区域中产生生长气相来生产碳化硅体积单晶 </span> </p> </li> <li> <div> <b>4. </b><a class="enjiyixqcontent" href="/patent-detail/06130426999823.html">HEATING ELEMENT DEVICE FOR PREVENTING TRNSFORMATION FOR THE SILICON SINGLE CRYSTAL INGOT GROWING APPARATUS FOR PREVENTING THE UNBALANCED OF THE HEAT CONVECTION DUE TO THE DEFORMATION OF THE HEAT CONVECTION</a> <b>[P]</b> . <span> 外国专利: <!-- 韩国专利: --> KR20100094047A </span> <span> . 2010-08-26</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译:防止硅单晶锭生长装置变形的加热元件装置,用于防止由于热对流变形而引起的热对流不平衡 </span> </p> </li> <li> <div> <b>5. </b><a class="enjiyixqcontent" href="/patent-detail/06130418447735.html">Surface modification single crystal SiC substrate, single crystal SiC substrate with epitaxial growth layer, a semiconductor chip, with single crystal SiC growth for species substrate and single crystal growth layer polycrystalline SiC substrate manufacturing method of</a> <b>[P]</b> . <span> 外国专利: <!-- 日本专利: --> JP5360639B2 </span> <span> . 2013-12-04</span> </div> <p class="zwjiyix translation" style="max-width: initial;height: auto;word-break: break-all;white-space: initial;text-overflow: initial;overflow: initial;"> <span>机译:表面改性单晶SiC衬底,具有外延生长层的单晶SiC衬底,半导体芯片,用于物种衬底的单晶SiC生长和单晶生长层多晶SiC衬底的制造方法 </span> </p> </li> </ul> </div> </div> </div> <div class="theme cardcommon" style="overflow: auto;display:none"> <h3 class="all_title" id="enpatent55">相关主题</h3> 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